P/N + Description + Content Search
Part Name(s) : 2SB1344 2SD2025 B1344 D2025
ROHM Semiconductor
Description : Power Transistor (-100V, -8A), Power Transistor (100V, 8A)
Part Name(s) : 2SD2607 D2607
ROHM Semiconductor
Description : NPN Silicon Epitaxial Planar Transistor (Darlington connection)
Unspecified
Description : SYNCHRONOUS DRAM 128Mb: x4, x8, x16 SDRAM 3.3V
Part Name(s) : HYS64V32200GU HYS72V32200GU HYS64V32200GU-8A HYS64V64220GU-8A HYS72V32200GU-8A HYS72V64220GU-8A
Infineon Technologies
Description : PC100-168 pin unbuffered DIMM Modules
Part Name(s) : BDX95
Semelab - > TT Electronics plc
Description : Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Part Name(s) : 2N6796
Semelab - > TT Electronics plc
Description : TMOS FET Transistor N – CHANNEL
Part Name(s) : 2N6796
Semelab - > TT Electronics plc
Description : TMOS FET Transistor N – CHANNEL (Rev - 1998)
Part Name(s) : 2N6796
Semelab - > TT Electronics plc
Description : TMOS FET ENHANCEMENT N - CHANNEL
TE Connectivity
Description : Thermal Transfer MP Metalized polyester labels
Part Name(s) : SB80W10T SB80W10T-H SB80W10T-TL-H
SANYO -> Panasonic
Description : Schottky Barrier Diode (Twin Type • Cathode Common)
Part Name(s) : SB80W10T
SANYO -> Panasonic
Description : Schottky Barrier Diode (Twin Type • Cathode Common) (Rev - 2010)
Part Name(s) : RFP8P10 RFP8P08 RFM8P10 RFM8P08
Harris Semiconductor
Description : -8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL Power MOSFETS
Part Name(s) : CR2AM-8A CR02AM-8A
MITSUBISHI ELECTRIC
Description : LOW Power USE GLASS PASSIVATION TYPE
Part Name(s) : 2SB1031 B1031
Inchange Semiconductor
Description : Silicon PNP Darlington Power Transistor
Part Name(s) : 2SB1031 B1031
New Jersey Semiconductor
Description : Silicon PNP Darlington Power Transistor
Part Name(s) : BDX62B
Semelab - > TT Electronics plc
Description : Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
Part Name(s) : 2N6536
Semelab - > TT Electronics plc
Description : Bipolar NPN Device in a Hermetically sealed TO66 Metal Package